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Nonequilibrium first-order phase transition in semiconductor system driven by colored noise

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  • Gudyma, Yu.V.

Abstract

We examine the mechanisms of action of colored multiplicative noise in a positionally disordered semiconductor with Moss–Burstein shift. It is shown that the action of multiplicative noise causes nonequilibrium first-order phase transition of the disorder–order-type in electron subsystem of semiconductor. There are relatively little changes in a condensed matter at such phase transitions, but the electron subsystem undergoes a strong reorganization. The steady photocarriers concentration distribution is studied within a unified colored-noise approximation.

Suggested Citation

  • Gudyma, Yu.V., 2004. "Nonequilibrium first-order phase transition in semiconductor system driven by colored noise," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 331(1), pages 61-68.
  • Handle: RePEc:eee:phsmap:v:331:y:2004:i:1:p:61-68
    DOI: 10.1016/j.physa.2003.09.017
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    Cited by:

    1. Lumi, Neeme & Laas, Katrin & Mankin, Romi, 2015. "Rising relative fluctuation as a warning indicator of discontinuous transitions in symbiotic metapopulations," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 437(C), pages 109-118.
    2. Duan, Wei-Long & Fang, Hui, 2020. "The unified colored noise approximation of multidimensional stochastic dynamic system," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 555(C).

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