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1/f Noise and intermittency due to diffusion of point defects in a semiconductor material

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  • Grüneis, Ferdinand

Abstract

Diffusion of point defects is investigated as a possible origin of 1/f noise in a semiconductor; as an example, diffusion of donor atoms in a strongly extrinsic semiconductor is dealt with. Due to diffusion of donor atoms, the generation–recombination (g–r) process at a certain site may be regarded as an intermittent stochastic process; consequently, the spectral patterns of this process are established. The time of intermission is equivalent to the time a donor atom takes to return to a certain site. Simulating the random walk of donor atoms on a simple cubic lattice this return time is found to be distributed like a power law and can be the source of 1/f noise in semiconductor with inhomogeneous current distribution.

Suggested Citation

  • Grüneis, Ferdinand, 2000. "1/f Noise and intermittency due to diffusion of point defects in a semiconductor material," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 282(1), pages 108-122.
    • Handle: RePEc:eee:phsmap:v:282:y:2000:i:1:p:108-122
    DOI: 10.1016/S0378-4371(00)00096-0
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