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Fluctuations generated at semiconductor interfaces

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  • Gomila, G.
  • Rubı́, J.M.

Abstract

We present a model for the description of the fluctuations generated by the exchange of carriers through a semiconductor interface. The model describes the fluctuations by means of a set of interfacial fluctuating terms, implemented into the corresponding fluctuating boundary conditions. Our formulation applies to both ideal as well as non-ideal interfaces, for which the presence of interface states is taken into account. The derivation of the model has been performed in the framework of non-equilibrium thermodynamics of systems with an interface, and with the help of the formalisms of the internal degrees of freedom and of the fluctuating hydrodynamics. Within the present theory, the description of the fluctuations generated by the exchange of carriers through a semiconductor interfaces relies, on the same grounds as the description of the fluctuations generated in bulk semiconductors.

Suggested Citation

  • Gomila, G. & Rubı́, J.M., 1998. "Fluctuations generated at semiconductor interfaces," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 258(1), pages 17-31.
    • Handle: RePEc:eee:phsmap:v:258:y:1998:i:1:p:17-31
    DOI: 10.1016/S0378-4371(98)00199-X
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    Cited by:

    1. Bonilla, L.L. & Carpio, A. & Plans, I., 2007. "Dislocations in cubic crystals described by discrete models," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 376(C), pages 361-377.

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