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Efficient non-vertical interband transitions in porous silicon

Author

Listed:
  • Cruz, M.
  • Beltrán, M.R.
  • Wang, C.
  • Tagüeña-Martínez, J.

Abstract

In this work, we study an inhomogeneous material, porous silicon (PS), using a supercell model and an s p3 s∗ tight-binding Hamiltonian. The interband non-vertical transitions are studied in two schemes, which consider different contributions within the intra-atomic approximation. The oscillator strength analysis as a function of the porosity reveals a significant enlargement of the optically active zone in the k-space, due to the localization of the wave function.

Suggested Citation

  • Cruz, M. & Beltrán, M.R. & Wang, C. & Tagüeña-Martínez, J., 1997. "Efficient non-vertical interband transitions in porous silicon," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 241(1), pages 382-385.
    • Handle: RePEc:eee:phsmap:v:241:y:1997:i:1:p:382-385
    DOI: 10.1016/S0378-4371(97)00111-8
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