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Incoherent mesoscopic phenomena in semiconductor structure of macroscopic size

Author

Listed:
  • Aronzon, B.A.
  • Rylkov, V.V.
  • Vedeneev, A.S.
  • Leotin, J.

Abstract

In Si : B MOS-structures (NB = 1.2 × 1018 cm−3), the formation of quasi-2D channel of hopping conductivity occurs in the region, where Fermi energy crosses the impurity band, shifted by gate voltage Vg. Rising gate voltage above zero (Vg > 0, the case of depletion) results in reproducible fluctuations of transverse voltage Vy between Hall probes, at temperatures 4.2–30 K and magnetic fields B up to 1 T, in spite of the macroscopic size of the sample (150 x 50 μm2) and the potential probe ledges (15 x 5 μm2).

Suggested Citation

  • Aronzon, B.A. & Rylkov, V.V. & Vedeneev, A.S. & Leotin, J., 1997. "Incoherent mesoscopic phenomena in semiconductor structure of macroscopic size," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 241(1), pages 259-266.
    • Handle: RePEc:eee:phsmap:v:241:y:1997:i:1:p:259-266
    DOI: 10.1016/S0378-4371(97)00093-9
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