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The thermoelectric power, the dark electrical resistivity and the grain boundary potential barrier in CdIn2Se4 thin films

Author

Listed:
  • Abdel Hady, D.
  • El-Shazly, A.A.
  • Soliman, H.S.
  • El-Shazly, E.A.

Abstract

The thermoelectric power (Seebeck coefficient S) was measured for several preannealed CdIn2Se4 thin films of different thicknesses. The thermoelectric power measurements indicate that the preannealed CdIn2Se4 thin films are n-type semiconductors. The thermoelectric was utilized to calculate the free charge carrier concentration in the temperature range of 298–453 K.

Suggested Citation

  • Abdel Hady, D. & El-Shazly, A.A. & Soliman, H.S. & El-Shazly, E.A., 1996. "The thermoelectric power, the dark electrical resistivity and the grain boundary potential barrier in CdIn2Se4 thin films," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 226(3), pages 324-329.
    • Handle: RePEc:eee:phsmap:v:226:y:1996:i:3:p:324-329
    DOI: 10.1016/0378-4371(95)00266-9
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