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중국 첨단 반도체 혁신 역량 분석 연구: 고대역 메모리(HBM)와 3세대 반도체를 중심으로(Analysis of China’s Advanced Semiconductor Innovation Capabilities: Focusing on High Bandwidth Memory (HBM) and 3rd Generation Semiconductors)

Author

Listed:
  • Baek, Seoin

    (KOREA INSTITUTE FOR INTERNATIONAL ECONOMIC POLICY (KIEP))

  • Zhao, Yali

    (KOREA INSTITUTE FOR INTERNATIONAL ECONOMIC POLICY (KIEP))

Abstract

본 연구는 중국의 첨단 반도체 혁신 역량을 정책적 지원 체계, 고대역 메모리(HBM), 3세대 반도체를 중심으로 종합적으로 분석하고, 이에 대한 한국의 대응 전략을 제시하고자 하였다. 분석 결과, 중국의 첨단 반도체 혁신은 다음과 같은 특징을 보이고 있는 것으로 나타났다. 첫째, 중국의 고대역 메모리 분야 연구는 2015년을 기점으로 급격히 성장하고 있으며, 중국의 화중과기대와 칭화대를 중심으로 강력한 연구그룹이 형성되어 있음을 파악했다. 연구 주제도 초기의 GPU 컴퓨팅, 시스템 성능 최적화 등 응용기술 중심에서 하드웨어 가속, 아키텍처 설계 등 원천기술 영역으로 확대되고 있다. This study aimed to comprehensively analyze China’s advanced semiconductor innovation capabilities, focusing on policy support systems, High Bandwidth Memory (HBM), and third-generation semiconductors, and suggest response strategies for South Korea. The analysis revealed the following characteristics of China’s advanced semiconductor innovation. First, China’s research in high-bandwidth memory has shown rapid growth since 2015, with strong research groups centered around Huazhong University of Science and Technology and Tsinghua University. Research topics have expanded from application technologies like GPU computing and system performance optimization to fundamental technologies such as hardware acceleration and architecture design. (the rest omitted)

Suggested Citation

  • Baek, Seoin & Zhao, Yali, 2024. "중국 첨단 반도체 혁신 역량 분석 연구: 고대역 메모리(HBM)와 3세대 반도체를 중심으로(Analysis of China’s Advanced Semiconductor Innovation Capabilities: Focusing on High Bandwidth Memory (HBM) and 3rd Generation Semiconductors)," Policy Reference 24-4, Korea Institute for International Economic Policy.
    • Handle: RePEc:ris:kiepre:2024_004
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