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半導体r&Dシステムのオープン化:F2リソグラフィ事例に学ぶ

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  • 東川, 巌
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    Nikon、Canon 二社で80%に達する199 年代初頭の絶頂期から、国内半導体デバイスメーカの凋落と時を一に国内半導体露光装置メーカNikon、Canon の地盤沈下が続いている。2002 年には着実にシェアを伸ばしてきたASML 社がトップに躍り出た。露光装置はコンタクト露光に始まり、プロキシティ露光、1:1 ミラースキャンから縮小投影露光へ進み、縮小投影露光はg 線、i 線、KrF、ArF と短波長化し、Step&Repeat からStep&Scanに移行してきた。競争は過酷で次世代露光装置の開発に露光装置メーカの命運がかかっている。2000 年前後にはArF 193 nm の次の技術が混沌としていた。ArF 193 nm に目途がついた1950 年代後半、次世代リソグラフィの選択は、露光装置メーカだけでなく半導体業界全体の問題でもあった。波長メリットが少ないとされたF2 157 nm は当初選択されずEPL に代表される電子線投影露光やEUVL と呼ばれる軟X線縮小投影露光が候補になっていた。 しかし開発は進展せずF2 157 nm に軸を置かざるを得なくなった。本稿では露光装置メーカ、デバイスメーカ、コンソーシアムなどが、EPL、EUVL に代えて再浮上させたF2 157 nmリソグラフィ技術の選択、開発の遅延、ArF 193 nm 液浸リソグラフィ技術への急展開と集中、F2 157 nm リソグラフィの断念、ArF 193 nm 液浸リソグラフィの急成長、限界となるNA 1.35 装置の投入へと突き進んだ過程を追い、技術開発の方向を変えていく様、リソグラフィ技術の世代交代の過酷さ、更なる寡占化を生んだ選択と集中・成長サイクルの創出過 程に垣間見られるオープンイノベーション戦略の優劣に迫る。

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    File URL: http://hermes-ir.lib.hit-u.ac.jp/rs/bitstream/10086/25581/3/070iirWP13_10.pdf
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    Paper provided by Institute of Innovation Research, Hitotsubashi University in its series IIR Working Paper with number 13-10.

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    Length: 44 p.
    Date of creation: Mar 2013
    Handle: RePEc:hit:iirwps:13-10
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