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Wearout Reliability-Based Characterization in Memory Packaging

In: Interconnect Reliability in Advanced Memory Device Packaging

Author

Listed:
  • Chong Leong, Gan

    (Micron Memory Taiwan Co. Ltd.)

  • Chen-Yu, Huang

    (Micron Memory Taiwan Co. Ltd.)

Abstract

Packaging reliability and materials failure mechanisms in memory device packaging are very important topics in semiconductor manufacturing. Reliability engineering is a fundamental part of all good electrical and mechanical engineering product designs. In this chapter, the concept of reliability, some backend packaging reliability models and first-level, second level wearout reliability of memory packaging are discussed. Key literature reviews of interconnect materials (bonding wires, solder alloys, solder bumping), mitigation strategies of prevention of those associated wearout failure modes are revealed in this chapter. The reliability of lead-free solder joints such as reliability testing and data analyses, design for reliability, and failure analyses of lead-free solder joints will be discussed in this chapter. First ball bond wearout reliability, solder bump reliability, solder joint reliability included board level drop and bending reliability are presented. At the end of this chapter, summary and key recommendation of future works have been provided for better clarity and reference purposes.

Suggested Citation

  • Chong Leong, Gan & Chen-Yu, Huang, 2023. "Wearout Reliability-Based Characterization in Memory Packaging," Springer Series in Reliability Engineering, in: Interconnect Reliability in Advanced Memory Device Packaging, chapter 0, pages 21-44, Springer.
    • Handle: RePEc:spr:ssrchp:978-3-031-26708-6_2
    DOI: 10.1007/978-3-031-26708-6_2
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