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Finite Element Method for Stress-Induced Voiding

In: Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections

Author

Listed:
  • Cher Ming Tan

    (Nanyang Technological University)

  • Zhenghao Gan

    (Semiconductor Manufacturing International (Shanghai) Corp.)

  • Wei Li

    (Singapore Institute of Manufacturing Technology)

  • Yuejin Hou

    (Nanyang Technological University)

Abstract

With the basic physics of stress-induced voiding (SIV) introduced in Chap. 2, the detailed finite element modeling of the mechanisms of SIV in Cu interconnect will be described here. The understanding of the voiding mechanism through the modeling can certainly shed light on the future design and process improvement of the multilevel interconnect structures. The most widely used commercial finite element software for finite element analysis is ANSYS or ABAQUS.

Suggested Citation

  • Cher Ming Tan & Zhenghao Gan & Wei Li & Yuejin Hou, 2011. "Finite Element Method for Stress-Induced Voiding," Springer Series in Reliability Engineering, in: Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections, edition 1, chapter 0, pages 113-130, Springer.
    • Handle: RePEc:spr:ssrchp:978-0-85729-310-7_5
    DOI: 10.1007/978-0-85729-310-7_5
    as

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