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Development of Physics-Based Modeling for ULSI Interconnections Failure Mechanisms: Electromigration and Stress-Induced Voiding

In: Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections

Author

Listed:
  • Cher Ming Tan

    (Nanyang Technological University)

  • Zhenghao Gan

    (Semiconductor Manufacturing International (Shanghai) Corp.)

  • Wei Li

    (Singapore Institute of Manufacturing Technology)

  • Yuejin Hou

    (Nanyang Technological University)

Abstract

In this chapter, we present a comprehensive review on the physics-based modeling of EM phenomena in ULSI interconnections over the last three decades. In the evolution of the physics-based modeling, some aspects of the physics are dropped for simplification, and some are added to accommodate new understanding on the EM physics as well as for the new development of the interconnect technology. With the continuous change in the metallization system and materials, the aspects of physics that have been dropped may become important again, and new physics might also occur with these changes in metallization system. Here, we re-examine the justification of dropping or adding various physical aspects in the EM modeling during their evolution and their implications on the future interconnect system.

Suggested Citation

  • Cher Ming Tan & Zhenghao Gan & Wei Li & Yuejin Hou, 2011. "Development of Physics-Based Modeling for ULSI Interconnections Failure Mechanisms: Electromigration and Stress-Induced Voiding," Springer Series in Reliability Engineering, in: Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections, edition 1, chapter 0, pages 5-38, Springer.
    • Handle: RePEc:spr:ssrchp:978-0-85729-310-7_2
    DOI: 10.1007/978-0-85729-310-7_2
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