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Optimal Design of Semiconductor Components

In: Numerical Techniques for Engineering Analysis and Design

Author

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  • J. B. Waddell

    (University College of Swansea, Department of Civil Engineering)

  • J. Middleton

    (University College of Swansea, Department of Civil Engineering)

Abstract

A numerical model for the analysis and design optimisation of semiconductor devices under reverse-bias off-state conditions is investigated. The finite element method is used for the analysis phase and the design objective is the minimisation of the peak surface electric field in order to encourage bulk breakdown of the device. The optimal design process consists of sequential redesign using sensitivity analysis and an adaptive technique for design variable assignation is introduced. Two termination techniques are considered, these bearing the shape of the surface termination profile (for non-planar devices), and the lateral variation of doping density across a material region adjacent to the surface (for planar devices). Results are presented to show the effectiveness of the technique in reducing the peak surface field.

Suggested Citation

  • J. B. Waddell & J. Middleton, 1987. "Optimal Design of Semiconductor Components," Springer Books, in: G. N. Pande & J. Middleton (ed.), Numerical Techniques for Engineering Analysis and Design, chapter 0, pages 465-473, Springer.
    • Handle: RePEc:spr:sprchp:978-94-009-3653-9_52
    DOI: 10.1007/978-94-009-3653-9_52
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