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Bifurcation and dynamical response of current oscillations in semiconductor with NDC

In: Complexity and Diversity

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  • Ken-ichi Oshio

    (Hiroshima University, Department of Materials Science)

Abstract

We present a simulational study on current oscillations in semiconductors with NDC (Negative Differential Conductivity) which brings nonlinear transport properties such that electric current decreases as increasing bias voltage. An one-dimensional model of gold-doped n-Ge has been proposed, and the computations have been performed under the boundary conditions with d.c. bias. We have found bifurcation diagrams from periodic to chaotic current oscillations, and studied dynamical response of the system to investigate its controllability.

Suggested Citation

  • Ken-ichi Oshio, 1997. "Bifurcation and dynamical response of current oscillations in semiconductor with NDC," Springer Books, in: Eiichi Ryoku Nakamura & Kiyoshi Kudo & Osamu Yamakawa & Yoichi Tamagawa (ed.), Complexity and Diversity, pages 120-122, Springer.
    • Handle: RePEc:spr:sprchp:978-4-431-66862-6_22
    DOI: 10.1007/978-4-431-66862-6_22
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