IDEAS home Printed from https://ideas.repec.org/h/spr/sprchp/978-4-431-66862-6_20.html
   My bibliography  Save this book chapter

Scaling behavior of the surface roughness in the crystallization process :transformation of polycrystalline Si from amorphous Si

In: Complexity and Diversity

Author

Listed:
  • N. Fujiyama

    (Hokkaido Univ., Dept. of Applied Phys.)

  • S. Tanda

    (Hokkaido Univ., Dept. of Applied Phys.)

  • Y. Takagi

    (Hokkaido Univ., Dept. of Applied Phys.)

  • K. Sajiki

    (Komatsu Ltd., Research Division)

  • Y. Niwatsukino

    (Komatsu Ltd., Research Division)

Abstract

We made polycrystalline silicon (poly-Si) thin films from amorphous silicon (a-Si) thin films by the excimer-laser crystallization method. And we have investigated the surface roughness in the process from a-Si to poly-Si crystallized gradually by changing the energy density E of the excimer-laser. By using atomic force microscopy (AFM), the surface width W(L, E) is estimated as the root mean square (rms) value of the roughness, where L is the length scale, E the energy density of the excimer-laser. We discovered a new scaling law in the crystallization process. We observed W (L, E) ~ L α (L ≪ L x ), and the saturation width W sat (E) scaled with E as W sat (E) ~ E β* (L ≫ L x ), where L x is the crossover length, the roughness exponent α = 0.88 ± 0.10, and the exponent β* = 1.37 ± 0.10, respectively.

Suggested Citation

  • N. Fujiyama & S. Tanda & Y. Takagi & K. Sajiki & Y. Niwatsukino, 1997. "Scaling behavior of the surface roughness in the crystallization process :transformation of polycrystalline Si from amorphous Si," Springer Books, in: Eiichi Ryoku Nakamura & Kiyoshi Kudo & Osamu Yamakawa & Yoichi Tamagawa (ed.), Complexity and Diversity, pages 114-116, Springer.
    • Handle: RePEc:spr:sprchp:978-4-431-66862-6_20
    DOI: 10.1007/978-4-431-66862-6_20
    as

    Download full text from publisher

    To our knowledge, this item is not available for download. To find whether it is available, there are three options:
    1. Check below whether another version of this item is available online.
    2. Check on the provider's web page whether it is in fact available.
    3. Perform a
    for a similarly titled item that would be available.

    More about this item

    Keywords

    ;
    ;
    ;
    ;
    ;

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:spr:sprchp:978-4-431-66862-6_20. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.springer.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.