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Dynamic Scaling of etched surface roughness of LaSrGaO4 single crystal by Atomic Force Microscopy

In: Complexity and Diversity

Author

Listed:
  • Yuzuru Takagi

    (Hokkaido University, Department of Applied Physics)

  • Satoshi Tanda

    (Hokkaido University, Department of Applied Physics)

  • Noriyuki Fujiyama

    (Hokkaido University, Department of Applied Physics)

  • Ikuto Aoyama

    (Komatsu Ltd., Research Division)

Abstract

We have studied kinetic roughening of etched surfaces of LaSrGaO4 single-Crystals, having layered perovskite structure like a high-Tc cuprate, by using atomic force microscopy. We found that the surface roughness exhibited a power law behavior on both the length scale and the etching time, which have self-affine structures such as surfaces of growing films. From our experiments, the etched LaSrGaO4 surface can be described as a self-affine fractal with a roughness exponent α = 0.90 ± 0.06 and a growth exponent β = 0.33 ± 0.05. Our results provide the first evidence that the etching process of LaSrGaO4 surface is dominated by a lattice vacancy growth model of the molecular beam epitaxy(MBE) type.

Suggested Citation

  • Yuzuru Takagi & Satoshi Tanda & Noriyuki Fujiyama & Ikuto Aoyama, 1997. "Dynamic Scaling of etched surface roughness of LaSrGaO4 single crystal by Atomic Force Microscopy," Springer Books, in: Eiichi Ryoku Nakamura & Kiyoshi Kudo & Osamu Yamakawa & Yoichi Tamagawa (ed.), Complexity and Diversity, pages 111-113, Springer.
    • Handle: RePEc:spr:sprchp:978-4-431-66862-6_19
    DOI: 10.1007/978-4-431-66862-6_19
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