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The Oxidation Process of Silicon

In: Lectures on Applied Mathematics

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  • W. Merz

    (Technische Universität München, Zentrum Mathematik)

Abstract

In electronic devices the electrical insulation of different areas is often achieved by layers of silicon-dioxide. These are usually created by exposing the silicon wafers at process temperatures between 700–1200°C to a gas flow containing oxygen or to a stream. Using different oxygen isotrops tracer experiments have shown that the new oxide is created at the interface between silicon and silicon-dioxide.

Suggested Citation

  • W. Merz, 2000. "The Oxidation Process of Silicon," Springer Books, in: Hans-Joachim Bungartz & Ronald H. W. Hoppe & Christoph Zenger (ed.), Lectures on Applied Mathematics, pages 217-231, Springer.
  • Handle: RePEc:spr:sprchp:978-3-642-59709-1_15
    DOI: 10.1007/978-3-642-59709-1_15
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