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Quantum Mechanical Studies of Boron Clustering in Silicon

In: High Performance Computing in Science and Engineering ’03

Author

Listed:
  • Péter Déak

    (Budapest University of Technology and Economics, Department of Atomic Physics)

  • Ádám Gali

    (Budapest University of Technology and Economics, Department of Atomic Physics)

  • Peter Pichler

    (Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie)

  • Heiner Ryssel

    (Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie
    Universität Erlangen-Nürnberg, Lehrstuhl für Elektronische Bauelemente)

Abstract

Boron-interstitial clusters (BICs) are known to be a key problem to controlling diffusion and activation of ultra-shallow boron implants in ULSI silicon device technology. During post-implantation annealing the self-interstitials, which had been created by the radiation damage, mediate fast transient diffusion of boron, during which stable and metastable BICs are formed. The BICs are either electrically inactive or the number of holes they can provide per number of boron atoms is significantly less than one. This causes a significant decrease in the activation rate. Therefore, sophisticated annealing strategies have to be developed to regain isolated boron substitutionals from BICs.

Suggested Citation

  • Péter Déak & Ádám Gali & Peter Pichler & Heiner Ryssel, 2003. "Quantum Mechanical Studies of Boron Clustering in Silicon," Springer Books, in: Egon Krause & Willi Jäger & Michael Resch (ed.), High Performance Computing in Science and Engineering ’03, pages 381-392, Springer.
    • Handle: RePEc:spr:sprchp:978-3-642-55876-4_28
    DOI: 10.1007/978-3-642-55876-4_28
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