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Modelling and Simulation of Strained Quantum Wells in Semiconductor Lasers

In: Mathematics — Key Technology for the Future

Author

Listed:
  • Hans-Christoph Kaiser

    (Weierstraß-Institut für Angewandte Analysis und Stochastik (WIAS))

  • Uwe Bandelow

    (Weierstraß-Institut für Angewandte Analysis und Stochastik (WIAS))

  • Thomas Koprucki

    (Weierstraß-Institut für Angewandte Analysis und Stochastik (WIAS))

  • Joachim Rehberg

    (Weierstraß-Institut für Angewandte Analysis und Stochastik (WIAS))

Abstract

A model allowing for efficiently obtaining band structure information on semiconductor Quantum Well structures will be demonstrated which is based on matrix-valued kp-Schrödinger operators. Effects such as confinement, band mixing, spin-orbit interaction and strain can be treated consistently. The impact of prominent Coulomb effects can be calculated by including the Hartree interaction via the Poisson equation and the bandgap renormalization via exchange-correlation potentials, resulting in generalized (matrix-valued) Schrödinger-Poisson systems. Band structure information enters via densities and the optical response function into comprehensive simulations of Multi Quantum Well lasers. These device simulations yield valuable information on device characteristics, including effects of carrier transport, waveguiding and heating and can be used for optimization.

Suggested Citation

  • Hans-Christoph Kaiser & Uwe Bandelow & Thomas Koprucki & Joachim Rehberg, 2003. "Modelling and Simulation of Strained Quantum Wells in Semiconductor Lasers," Springer Books, in: Willi Jäger & Hans-Joachim Krebs (ed.), Mathematics — Key Technology for the Future, pages 377-390, Springer.
    • Handle: RePEc:spr:sprchp:978-3-642-55753-8_31
    DOI: 10.1007/978-3-642-55753-8_31
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