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Simulation of Industrial Crystal Growth by the Vertical Bridgman Method

In: Mathematics — Key Technology for the Future

Author

Listed:
  • Gerhard Dziuk

    (Institut für Angewandte Mathematik, Universität Freiburg)

  • Stefan Boschert

    (Kristallographisches Institut, Universität Freiburg)

  • Alfred Schmidt

    (Institut für Angewandte Mathematik, Universität Freiburg)

  • Kunibert G. Siebert

    (Institut für Angewandte Mathematik, Universität Freiburg)

  • Eberhard Bänsch

    (Zentrum für Technomathematik, Universität Bremen)

  • Klaus-Werner Benz

    (Kristallographisches Institut, Universität Freiburg)

  • Thomas Kaiser

    (Kristallographisches Institut, Universität Freiburg)

Abstract

Single crystals of Cadmium-Zinc-Telluride are used as a substrate material for the production of infrared detectors and are usually grown by the vertical Bridgman method. We present a simulation of the whole growth process in two steps: In the first step, the (stationary) heat transport in the furnace is modeled and calculated for different positions of the ampoule. This provides information about the most important parameter during this process: the temperature distribution in furnace and ampoule. The obtained temperatures are then used in the second step as boundary conditions for the (time dependent) simulation of temperature and convection in the ampoule. Only the use of adaptive finite element methods allows an efficient numerical simulation of the moving phase boundary, the convection in the melt and the temperature distribution in melt and crystal. Numerical results are presented for both furnace and ampoule simulations.

Suggested Citation

  • Gerhard Dziuk & Stefan Boschert & Alfred Schmidt & Kunibert G. Siebert & Eberhard Bänsch & Klaus-Werner Benz & Thomas Kaiser, 2003. "Simulation of Industrial Crystal Growth by the Vertical Bridgman Method," Springer Books, in: Willi Jäger & Hans-Joachim Krebs (ed.), Mathematics — Key Technology for the Future, pages 315-330, Springer.
    • Handle: RePEc:spr:sprchp:978-3-642-55753-8_26
    DOI: 10.1007/978-3-642-55753-8_26
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