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Numerical Simulation of Thermal Effects in Coupled Optoelectronic Device-circuit Systems

In: Mathematics – Key Technology for the Future

Author

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  • Markus Brunk

    (Universität Mainz, Institut für Mathematik)

  • Ansgar Jüngel

    (Technische Universität Wien, Institut für Analysis und Scientific Computing)

Abstract

The control of thermal effects becomes more and more important in modern semiconductor circuits like in the simplified CMOS transceiver representation described by U. Feldmann in the above article Numerical simulation of multiscale models for radio frequency circuits in the time domain. The standard approach for modeling integrated circuits is to replace the semiconductor devices by equivalent circuits consisting of basic elements and resulting in so-called compact models. Parasitic thermal effects, however, require a very large number of basic elements and a careful adjustment of the resulting large number of parameters in order to achieve the needed accuracy.

Suggested Citation

  • Markus Brunk & Ansgar Jüngel, 2008. "Numerical Simulation of Thermal Effects in Coupled Optoelectronic Device-circuit Systems," Springer Books, in: Hans-Joachim Krebs & Willi Jäger (ed.), Mathematics – Key Technology for the Future, pages 29-38, Springer.
    • Handle: RePEc:spr:sprchp:978-3-540-77203-3_4
    DOI: 10.1007/978-3-540-77203-3_4
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