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A Metaheuristic Approach for an Optimized Design of a Silicon Carbide Operational Amplifier

In: Integral Methods in Science and Engineering, Volume 2

Author

Listed:
  • M. Pourreza

    (Sharif University of Technology, Department of Computer Engineering)

  • S. Kargarrazi

    (The Royal Institute of Technology)

Abstract

Silicon Carbide (SiC) has shown to be a superior material compared to Silicon for high-temperature integrated electronics applications, due to its excellent physical properties. In SiC electronics, device parameters’ variations over the temperature range along with the fabrication process variations have made the optimized design of analog integrated circuits extremely challenging. A fundamental analog integrated circuit is an operational amplifier, for which voltage gain and power consumption are considered as the two most significant performance metrics. In this paper, a metaheuristic is presented to optimize these metrics in the design of a bipolar SiC operational amplifier. The problem is analyzed in the existence of different design and fabrication process constraints and variables. Comparison of the results of the proposed algorithm with the designer’s simulated voltage gain for a SiC bipolar operational amplifier reveals that the proposed algorithm in this paper can provide at least 10dB higher voltage gain. In future works, the method can also be extended to fit for other analog circuits in SiC and similar emerging semiconductor technologies.

Suggested Citation

  • M. Pourreza & S. Kargarrazi, 2017. "A Metaheuristic Approach for an Optimized Design of a Silicon Carbide Operational Amplifier," Springer Books, in: Christian Constanda & Matteo Dalla Riva & Pier Domenico Lamberti & Paolo Musolino (ed.), Integral Methods in Science and Engineering, Volume 2, chapter 0, pages 211-219, Springer.
    • Handle: RePEc:spr:sprchp:978-3-319-59387-6_21
    DOI: 10.1007/978-3-319-59387-6_21
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