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Novel Non-thermal Ablation Mechanics in the Laser Ablation of Silicon

In: High Performance Computing in Science and Engineering '23

Author

Listed:
  • Dominic Klein

    (Universität Stuttgart, Institut für Funktionelle Materie und Quantentechnologien)

  • Simon Kümmel

    (Universität Stuttgart, Institut für Funktionelle Materie und Quantentechnologien)

  • Johannes Roth

    (Universität Stuttgart, Institut für Funktionelle Materie und Quantentechnologien)

Abstract

We investigate the non-thermal material dynamics of strongly excited silicon during ultra-fast laser ablation. In contrast to metals, silicon shows strongly excitation-dependent interatomic bonding strengths, which gives rise to a number of unique material dynamics like non-thermal melting, Coulomb explosions and altered carrier heat conduction due to charge carrier confinement. In this study, we report novel non-thermal ablation mechanisms in the ultra-fast single shot laser ablation of silicon and perform large scale massive multi-parallel simulations on experimentally achievable length scales with atomistic resolution. For this, we model the ultra-fast carrier dynamic utilizing the Thermal-Spike-Model coupled to Molecular Dynamics simulations and include the accompanied excitation-dependent non-thermal bonding strength manipulation by application of the excitation-dependent modified Tersoff Potential. Further, we present first results on the systematic construction of the excitation-dependent phase diagram of silicon by thermodynamic integration.

Suggested Citation

  • Dominic Klein & Simon Kümmel & Johannes Roth, 2026. "Novel Non-thermal Ablation Mechanics in the Laser Ablation of Silicon," Springer Books, in: Thomas Ludwig & Peter Bastian & Michael M. Resch (ed.), High Performance Computing in Science and Engineering '23, pages 133-147, Springer.
  • Handle: RePEc:spr:sprchp:978-3-031-91312-9_10
    DOI: 10.1007/978-3-031-91312-9_10
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