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Tubular Channel Triple-Material Gate-Wrap-Around MOSFET for Industry 5.0-Low Power and High Performance Applications Incorporating Temperature Variations

In: Industry 5.0

Author

Listed:
  • Pritha Banerjee

    (Jadavpur University)

  • Jayoti Das

    (Jadavpur University)

Abstract

Analytical modeling and simulation-based performance exploration of Tubular Channel Triple-Material Gate-Wrap-Around (TC TM GWA) MOSFET has been accentuated in the current investigation. Results revealed offer illustrative analysis of salient device features like threshold voltage, subthreshold swing, drain current, switching ratio and their response towards temperature alterations. Elucidative insights on channel dimension shrinkages on device features are provided. Comparative assessment of the recommended device performance with its Single-Material Gate Equivalent in terms of threshold voltage, drain-induced barrier lowering, and hot carrier effect reveals the benefits of using gate work function in the recommended device. The analytical results have been authenticated using simulation outputs from Silvaco Atlas 3D.

Suggested Citation

  • Pritha Banerjee & Jayoti Das, 2025. "Tubular Channel Triple-Material Gate-Wrap-Around MOSFET for Industry 5.0-Low Power and High Performance Applications Incorporating Temperature Variations," Springer Books, in: Indranil Sarkar & Abhishek Hazra & Poonam Maurya (ed.), Industry 5.0, pages 381-411, Springer.
    • Handle: RePEc:spr:sprchp:978-3-031-87837-4_16
    DOI: 10.1007/978-3-031-87837-4_16
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