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Simulation of Electron Transport in Semiconductor Microstructures: Field Emission from Nanotip

In: Mathematical Modeling

Author

Listed:
  • V. A. Fedirko

    (Moscow State University of Technology “STANKIN”)

  • Yu. N. Karamzin
  • S. V. Polyakov

    (Institute for Mathematical Modelling of RAS)

Abstract

Semiconductor submicron structures and nanostructures are now the basis of modern solid state electronics. Numerical simulation of their static and dynamic characteristic is an actual practical problem and adequate mathematical modeling of electron transport in these structures based on clear understanding of its fundamental physical peculiarities is vital for successful development of submicron devices.

Suggested Citation

  • V. A. Fedirko & Yu. N. Karamzin & S. V. Polyakov, 2001. "Simulation of Electron Transport in Semiconductor Microstructures: Field Emission from Nanotip," Springer Books, in: Ludmila A. Uvarova & Anatolii V. Latyshev (ed.), Mathematical Modeling, pages 79-89, Springer.
    • Handle: RePEc:spr:sprchp:978-1-4757-3397-6_8
    DOI: 10.1007/978-1-4757-3397-6_8
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