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Diode Structure for Generation of Sub-Poissonian Photon Fluxes by Stark-Effect Blockade of Emissions

In: Quantum Communication, Computing, and Measurement

Author

Listed:
  • Masahide Kobayashi

    (Faculty of Engineering Hiroshima University, Department of Physical Electronics)

  • Hiroyuki Sumitomo

    (Faculty of Engineering Hiroshima University, Department of Physical Electronics)

  • Yutaka Kadoya

    (Faculty of Engineering Hiroshima University, Department of Physical Electronics)

  • Masamichi Yamanishi

    (Faculty of Engineering Hiroshima University, Department of Physical Electronics)

  • Masahito Ueda

    (Faculty of Engineering Hiroshima University, Department of Physical Electronics)

Abstract

By a new scheme for the generation of sub-Poissonian photon fluxes named quantum-confined Stark effect (QCSE) blockade, it is predicted that sub-Poissonian photons at 10-photon levels can be generated with a small size semiconductor light emitter driven even by a constant voltage source. We demonstrate how to design a semiconductor diode for the proposed scheme. As a result, it is shown that a strict adjustment of the doping concentration in the p- and n-doped widegap regions is not always required. Both stray capacitance and leakage conductance are unavoidable in such a small size device, but are pointed out not to affect the sub-Poissonian photon generation because of the constant voltage operation.

Suggested Citation

  • Masahide Kobayashi & Hiroyuki Sumitomo & Yutaka Kadoya & Masamichi Yamanishi & Masahito Ueda, 1997. "Diode Structure for Generation of Sub-Poissonian Photon Fluxes by Stark-Effect Blockade of Emissions," Springer Books, in: O. Hirota & A. S. Holevo & C. M. Caves (ed.), Quantum Communication, Computing, and Measurement, pages 503-512, Springer.
    • Handle: RePEc:spr:sprchp:978-1-4615-5923-8_55
    DOI: 10.1007/978-1-4615-5923-8_55
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