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Modelling of 2d Electron Field Emission from Silicon Microcathode

In: Mathematical Models of Non-Linear Excitations, Transfer, Dynamics, and Control in Condensed Systems and Other Media

Author

Listed:
  • Valery A. Fedirko

    (Moscow State University of Technology “STANKIN”)

  • Sergey V. Polyakov

    (lnstitute for Mathematical Modelling Russian Academy of Sciences)

Abstract

Our paper is devoted to the mathematical modelling of non-linear non-equilibrium processes in vacuum microelectronic semiconductor devices (VMSD). VMSD have proved perspective for various applications, especially for the design of field emission flat displays. Therefore, the fabrication of field emitter arrays with sufficiently high, controlled and stable emission ability is very important task in microvacuum device technology. Vacuum microelectronics batch technology is now in progress, and silicon is considered as one of the most suitable material for microcathode arrays (see1,2). For a successful development of VMSD the accurate calculations of the emission characteristics of silicon cathodes are badly needed. Thus, the mathematical modelling becomes one of the most important component of VMSD technology.

Suggested Citation

  • Valery A. Fedirko & Sergey V. Polyakov, 1999. "Modelling of 2d Electron Field Emission from Silicon Microcathode," Springer Books, in: Ludmila A. Uvarova & Arkadii E. Arinstein & Anatolii V. Latyshev (ed.), Mathematical Models of Non-Linear Excitations, Transfer, Dynamics, and Control in Condensed Systems and Other Media, pages 221-228, Springer.
    • Handle: RePEc:spr:sprchp:978-1-4615-4799-0_19
    DOI: 10.1007/978-1-4615-4799-0_19
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