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ZnGa2O4 THIN FILM TRANSISTORS AND PHOTOTRANSISTORS BY RF SPUTTERING METHOD

Author

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  • EN-MIN HUANG

    (Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan)

  • SHENG-PO CHANG

    (��Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung City 88157, Taiwan)

  • TZU-YUAN LIU

    (Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan)

  • YUN-CHIEH TSAI

    (Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan)

  • SHOOU-JINN CHANG

    (Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan)

  • JONE-FANG CHEN

    (Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan)

Abstract

In this study, ZnGa2O4 thin-film transistors (TFTs) with various channel layer thicknesses were fabricated using radio frequency (RF) magnetron sputtering. The thickness of 30nm exhibited the best performance and outstanding gate-control ability with an on/off current ratio of 6.48×105, threshold voltage (VT) of 3.28V, and subthreshold swing (SS) of 0.31V/decade. ZnGa2O4, as a wide-bandgap highly transparent semiconducting material, is a potential candidate for optoelectronic applications. Therefore, we extended the applicability of ZnGa2O4 TFT with 30nm channel layer thickness to phototransistors. The phototransistor had a maximum responsivity of 0.0025A/W and a UV-to-visible rejection ratio of 9.80×103 at a bias voltage (VG) of −2 V.

Suggested Citation

  • En-Min Huang & Sheng-Po Chang & Tzu-Yuan Liu & Yun-Chieh Tsai & Shoou-Jinn Chang & Jone-Fang Chen, 2025. "ZnGa2O4 THIN FILM TRANSISTORS AND PHOTOTRANSISTORS BY RF SPUTTERING METHOD," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 32(08), pages 1-7, August.
    • Handle: RePEc:wsi:srlxxx:v:32:y:2025:i:08:n:s0218625x25400098
    DOI: 10.1142/S0218625X25400098
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