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THE EFFECT OF THERMAL OXIDATION ON THE PHOTORESPONSE PROPERTIES OF PbSe PHOTODETECTORS

Author

Listed:
  • JINHAO DING

    (��PipeChina Group Beijing Pipeline Co., Ltd., Beijing 100101, P. R. China)

  • YIJI SONG

    (��Key Laboratory of Thin Film Sensing Technology for National, Defense of Hunan Province, The 48th Research Institute of China Electronics Technology Group Corporation, Changsha 410111, P. R. China)

  • DING DING

    (School of Intelligent Engineering and Intelligent Manufacturing, Hunan University of Technology and Business, Changsha 410205, P. R. China†Key Laboratory of Thin Film Sensing Technology for National, Defense of Hunan Province, The 48th Research Institute of China Electronics Technology Group Corporation, Changsha 410111, P. R. China)

Abstract

In this study, thin PbSe films were deposited on the Si(100) by ion beam sputtering aiming at forming photoconductive infrared detectors. PbSe photodetectors are then gained through thermal oxidation over different temperatures for sensitization. The effect of oxygen sensitization on the morphology, composition and structure of PbSe photodetectors is studied. It was found that during the sensitization, the PbSe thin film grains gradually refine the melting junction due to oxidation and recrystallization. The proportion of the film surface O/(PbSe) atoms increased significantly, while the Se/Pb atoms greatly decreased due to the increased gasification of SeO2. The noise signal for sensitized PbSe films decreased and the detection rates were improved. The sensitization process designed in this paper helps to improve the photoresponse function of PbSe films.

Suggested Citation

  • Jinhao Ding & Yiji Song & Ding Ding, 2023. "THE EFFECT OF THERMAL OXIDATION ON THE PHOTORESPONSE PROPERTIES OF PbSe PHOTODETECTORS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 30(08), pages 1-8, August.
    • Handle: RePEc:wsi:srlxxx:v:30:y:2023:i:08:n:s0218625x23500518
    DOI: 10.1142/S0218625X23500518
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