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CHEMICAL MECHANICAL POLISHING AND ITS MECHANISM ON YTTERBIUM-DOPED MIXED SESQUIOXIDES (Yb:LuScO3)

Author

Listed:
  • YUANYUAN FANG

    (Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China†University of Chinese Academy of Sciences, 100049 Beijing, P. R. China)

  • HONGBO HE

    (Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China)

  • LUNZHE WU

    (Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China)

  • ZHE WANG

    (Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China†University of Chinese Academy of Sciences, 100049 Beijing, P. R. China)

  • AIHUAN DUN

    (Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China)

  • LONG ZHANG

    (Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China)

Abstract

In this paper, Yb:LuScO3 crystal was processed by chemical mechanical polishing (CMP), and the surface roughness of 0.18nm was obtained. The atomic step structures of these sesquioxide crystals are successfully characterized by AFM scanning probe technology. Through several CMP experiments, the basic material removal mechanism of a ytterbium-doped LuScO3 crystal during CMP is studied. Based on the findings, a material removal model is established. The results of this study provide ideas for the study of CMP, crystal growth and epitaxy.

Suggested Citation

  • Yuanyuan Fang & Hongbo He & Lunzhe Wu & Zhe Wang & Aihuan Dun & Long Zhang, 2021. "CHEMICAL MECHANICAL POLISHING AND ITS MECHANISM ON YTTERBIUM-DOPED MIXED SESQUIOXIDES (Yb:LuScO3)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 28(01), pages 1-11, January.
    • Handle: RePEc:wsi:srlxxx:v:28:y:2021:i:01:n:s0218625x20500365
    DOI: 10.1142/S0218625X20500365
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