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INFLUENCE OF ARGON GAS AND COPPER THICKNESS ON THE OPTOELECTRONICAL AND STRUCTURAL PROPERTIES OF AlZnO/Cu/AlZnO THIN FILM

Author

Listed:
  • AREZOO MOSHABAKI

    (Department of Physics, Shiraz University of Technology, Shiraz 71555-313, Iran)

  • ERFAN KADIVAR

    (Department of Physics, Shiraz University of Technology, Shiraz 71555-313, Iran)

  • ALIREZA FIROOZIFAR

    (Department of Physics, College of Sciences, University of Isfahan, Isfahan, Iran)

Abstract

AlZnO/Cu/AlZnO multilayer films were deposited on glass substrate by RF magnetron sputtering of AlZnO target and DC magnetron sputtering of copper target at room temperature. Subsequently, some of the samples have been annealed for 20min in vacuum or air at 350∘C for 20min. The optical, surface morphology, crystal structure, and electrical characteristics have been examined by spectrophotometry, atomic force microscope, field emission scanning electron microscopy, X-ray diffraction, and four-point probe as a function of argon gas flux, and copper thickness. It is found that the crystallinity of AlZnO and Cu layers improve by increasing the thickness of copper film. We have found that the maximum value of figure of merit is related to the copper thickness of 8nm. Finally, the AlZnO/Cu/AlZnO thin films have been processed with alumina polishing solution by ultrasonic method. The optimum process parameters have been obtained to provide a very smooth surface.

Suggested Citation

  • Arezoo Moshabaki & Erfan Kadivar & Alireza Firoozifar, 2020. "INFLUENCE OF ARGON GAS AND COPPER THICKNESS ON THE OPTOELECTRONICAL AND STRUCTURAL PROPERTIES OF AlZnO/Cu/AlZnO THIN FILM," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 27(01), pages 1-6, January.
    • Handle: RePEc:wsi:srlxxx:v:27:y:2020:i:01:n:s0218625x19500884
    DOI: 10.1142/S0218625X19500884
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