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STRUCTURAL, FERROELECTRIC AND ENERGY-STORAGE PROPERTIES OF LEAD-FREE Zr-DOPED Bi0.5(Na0.80K0.20)0.5TiO3 FILMS

Author

Listed:
  • NGO DUC QUAN

    (School of Engineering Physics, Hanoi University of Science and Technology, No. 1, Dai Co Viet, Hanoi 100000, Vietnam)

  • CHU T. THANH HUONG

    (#x2020;School of Chemical Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet, Hanoi 100000, Vietnam)

  • NGUYEN T. HONG PHUONG

    (#x2020;School of Chemical Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet, Hanoi 100000, Vietnam)

  • NGUYEN VAN HONG

    (School of Engineering Physics, Hanoi University of Science and Technology, No. 1, Dai Co Viet, Hanoi 100000, Vietnam)

  • VU NGOC HUNG

    (#x2021;International Institute for Materials Science, Hanoi University of Science and Technology, No. 1, Dai Co Viet, Hanoi 100000, Vietnam)

  • MINH-DUC NGUYEN

    (#xA7;Faculty of Science and Technology, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, 7500 AE Enschede, The Netherlands)

Abstract

Perovskite-type lead-free Bi0.5(Na0.80K0.20)0.5(Ti1−xZrx)O3 (BNKT-xZr) ferroelectric films (with x from 0.00 to 0.05) were synthesized on Pt/Ti/SiO2/Si substrates via chemical solution deposition. The influence of Zr4+ concentration on the microstructures, ferroelectric and energy-storage properties of the prepared films was investigated in detail. It showed that the BNKT-xZr films possessed rhombohedral and tetragonal symmetries in morphotropic phase boundary when a small amount of Zr4+ was added. Ferroelectric and energy-storage properties of the films investigated at an applied electric field of 600kV/cm were significantly enhanced with appropriate Zr4+ concentration. The remnant polarization (Pr), maximum polarization (Pmax) and Pmax–Pr values at x=0.02 reached the highest values of 18.1μC/cm2, 42.0μC/cm2 and 24.0μC/cm2, respectively. Thanks to the strong enhancement in Pmax and the large Pmax–Pr value, the highest recoverable energy-storage density gets the value of 4.6J/cm3 for the 2mol.% Zr4+-doped BNKT film. These obtained results indicate that the appropriate Zr4+-doped BNKT films have many application potentials in the advanced capacitors.

Suggested Citation

  • Ngo Duc Quan & Chu T. Thanh Huong & Nguyen T. Hong Phuong & Nguyen Van Hong & Vu Ngoc Hung & Minh-Duc Nguyen, 2020. "STRUCTURAL, FERROELECTRIC AND ENERGY-STORAGE PROPERTIES OF LEAD-FREE Zr-DOPED Bi0.5(Na0.80K0.20)0.5TiO3 FILMS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 27(01), pages 1-9, January.
    • Handle: RePEc:wsi:srlxxx:v:27:y:2020:i:01:n:s0218625x19500823
    DOI: 10.1142/S0218625X19500823
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