Author
Listed:
- WENBO KANG
(State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China)
- DONGMEI ZHU
(State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China)
- XIAOKE LU
(State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China)
- ZHIBIN HUANG
(State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China)
- WANCHENG ZHOU
(State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China)
- FA LUO
(State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, P. R. China)
Abstract
PtOx films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O2 mixture atmosphere at substrate temperatures ranging from 200∘C to 400∘C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtOx films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtOx films were mainly composed of PtO and PtO2 phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature.
Suggested Citation
Wenbo Kang & Dongmei Zhu & Xiaoke Lu & Zhibin Huang & Wancheng Zhou & Fa Luo, 2019.
"INFLUENCE OF SUBSTRATE TEMPERATURE ON THE COMPOSITION, ELECTRICAL RESISTIVITY AND INFRARED EMISSIVITY OF PtOx FILMS,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 26(09), pages 1-6, November.
Handle:
RePEc:wsi:srlxxx:v:26:y:2019:i:09:n:s0218625x19500562
DOI: 10.1142/S0218625X19500562
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