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Ultra-High Sensitivity Vanadium–Vanadium Sesquioxide–Vanadium (V–V2o3–V) Symmetric Tunnel Junction Diode

Author

Listed:
  • MOHAMED ABDEL-RAHMAN

    (Electrical Engineering Department, King Saud University, College of Engineering PO Box 800, Riyadh 11421, Saudi Arabia)

Abstract

In this paper, a symmetrical MIM tunnel junction diode with a novel material combination, vanadium–vanadium sequioxide–vanadium (V–V2O3–V) is fabricated and electrically characterized. Analysis of the measured current-voltage (I–V) characteristics of the fabricated MIM diode revealed an ultra-high diode sensitivity of −9.24V−1 at an applied bias of −0.104V. Based on the measured I–V characteristics, theoretical predictions were performed showing that the diode’s dynamic resistance can be tuned for matching to coupled antennas, in rectenna structures, whilst maintaining high levels of sensitivities using practically realizable V2O3 insulator thicknesses.

Suggested Citation

  • Mohamed Abdel-Rahman, 2019. "Ultra-High Sensitivity Vanadium–Vanadium Sesquioxide–Vanadium (V–V2o3–V) Symmetric Tunnel Junction Diode," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 26(08), pages 1-4, October.
    • Handle: RePEc:wsi:srlxxx:v:26:y:2019:i:08:n:s0218625x19500410
    DOI: 10.1142/S0218625X19500410
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