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INFLUENCE OF ARGON PRESSURE ON MICROSTRUCTURE AND OPTICAL PROPERTIES OF Zn0.9Se:Co0.1 THIN FILMS PREPARED BY PULSED LASER DEPOSITION

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  • SHU FENG LI

    (College of Applied Sciences, Beijing University of Technology, Beijing 100124, P. R. China†Fundament Department, The Chinese People’s Armed Police Forces Academy, Langfang 065000, P. R. China)

  • LI WANG

    (College of Applied Sciences, Beijing University of Technology, Beijing 100124, P. R. China)

  • XUEQIONG SU

    (College of Applied Sciences, Beijing University of Technology, Beijing 100124, P. R. China)

  • DONGWEN GAO

    (College of Applied Sciences, Beijing University of Technology, Beijing 100124, P. R. China)

  • LE KONG

    (College of Applied Sciences, Beijing University of Technology, Beijing 100124, P. R. China)

Abstract

Zn0.9Se:Co0.1 thin films were deposited on sapphire (Al2O3) substrates in argon atmosphere at various gas pressures by pulsed laser deposition. Influence of argon pressure on the thickness, surface morphology, crystal structure and optical properties of the thin films were investigated by various diagnosis tools. It was found that these physical properties were correlated to the argon pressure and appeared like a mutation between the pressure of 2Pa and 4Pa. As the deposition pressure changed from 2Pa to 4Pa, the collision probability between ablated species and argon molecule was increased, which resulted in the transformation of the deposition type from sputter effect to adsorption effect and the mutation of film thickness and structure. These in turn influence the transmission range and band gap of the films. All of the results suggest that the ambient pressure is a very important factor to the deposition of Zn0.9Se:Co0.1 films by PLD.

Suggested Citation

  • Shu Feng Li & Li Wang & Xueqiong Su & Dongwen Gao & Le Kong, 2019. "INFLUENCE OF ARGON PRESSURE ON MICROSTRUCTURE AND OPTICAL PROPERTIES OF Zn0.9Se:Co0.1 THIN FILMS PREPARED BY PULSED LASER DEPOSITION," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 26(04), pages 1-7, May.
    • Handle: RePEc:wsi:srlxxx:v:26:y:2019:i:04:n:s0218625x18501767
    DOI: 10.1142/S0218625X18501767
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