IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v26y2019i01ns0218625x18501330.html
   My bibliography  Save this article

High Precision Simulation On Surface Potential Of Cellular Electrets By Charge Simulation Method

Author

Listed:
  • J. W. ZHANG

    (Key Laboratory of Engineering Dielectrics and Its Application, Harbin University of Science and Technology, No. 52 Xuefu Road, Harbin 150080, P. R. China†School of Electrical Engineering, Northeast Electric Power University, No. 169 Changchun Road, Jilin 132013, P. R. China)

  • X. CHEN

    (#x2021;State Grid Tianjin Training Center, No. 6 Zhongshanmen No. 2 Road, Hedong District, Tianjin 300171, P. R. China)

  • Y. S. ZHAO

    (#xA7;State Grid Information and Telecommunication Group Co. Ltd., Beijing 100031, P. R. China)

  • Z. Y. SU

    (#xB6;School of Computer Science and Information Technology, Northeast Normal University, Changchun 130117, P. R. China)

  • R. T. LIU

    (#x2225;State Grid Liaoning Province Power Co. Ltd., Power Research Institute, Shenyang 110181, P. R. China)

Abstract

Surface potential is one of the key properties of charge retain ability and energy storage performance of cellular electrets. Based on charge simulation method (CSM), a high precision simulation algorithm of surface potential of functional dielectrics is proposed in this paper, which can be applied to the simulations of cellular polypropylene after high-voltage corona discharge. In order to validate the modeling, the surface potential of insulating polymer after corona discharge is measured by an electrostatic measurement system and compared with simulation results based on CSM and finite element method (FEM). The result shows that the numerical simulation based on CSM is well consistent with the experimental data, which indicates that the modeling based on CSM can be used in the calculation and analysis of charge storage ability of capacitor and electrostatic generator based on functional electrets. Moreover, as simulation based on CSM has higher precision than FEM, investigation of surface charge storage ability and prediction of electrostatic hazards of insulating dielectrics could be realized by using CSM.

Suggested Citation

  • J. W. Zhang & X. Chen & Y. S. Zhao & Z. Y. Su & R. T. Liu, 2019. "High Precision Simulation On Surface Potential Of Cellular Electrets By Charge Simulation Method," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 26(01), pages 1-5, January.
    • Handle: RePEc:wsi:srlxxx:v:26:y:2019:i:01:n:s0218625x18501330
    DOI: 10.1142/S0218625X18501330
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X18501330
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X18501330?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:26:y:2019:i:01:n:s0218625x18501330. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.