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PROPERTIES OF LOW-LEVEL Sn-DOPED In2S3 FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

Author

Listed:
  • N. BOUGUILA

    (Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l’Environnement, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig 6072 Gabès, Tunisie)

  • M. KRAINI

    (Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l’Environnement, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig 6072 Gabès, Tunisie)

  • J. KOAIB

    (Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l’Environnement, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig 6072 Gabès, Tunisie)

  • I. HALIDOU

    (#x2020;Département de Physique, Faculté des Sciences et Techniques, Université Abdou Moumouni, BP 10662 Niamey, Niger)

  • C. VÁZQUEZ-VÁZQUEZ

    (#x2021;Laboratory of Magnetism and Nanotechnology, Institute of Technological Research, Universidade de Santiago de Compostela, 15782 Santiago de Compostela, Spain)

  • M. A. LÓPEZ-QUINTELA

    (#x2021;Laboratory of Magnetism and Nanotechnology, Institute of Technological Research, Universidade de Santiago de Compostela, 15782 Santiago de Compostela, Spain)

  • S. ALAYA

    (Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l’Environnement, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig 6072 Gabès, Tunisie)

Abstract

Tin-doped indium sulfide films were grown on glass substrates by spray pyrolysis technique at low different Sn:In atomic ratio in the starting solution and optimum experiment conditions (Ts=340∘C, S:In=2). The tin to indium molar ratio Sn:In was varied from 0 to 4×10−3 in the solution. The obtained films with 2μm of thickness, are perfectly adhered, homogenous and uniform on the substrates. X-ray diffraction study reveals that all the films are formed in β phase grown preferentially along (400). These films lose the orientation with increasing tin doping level. The crystallite size of undoped film was 48.8nm, which increases to 59.2nm corresponding to the film grown with Sn:In=4×10−3. Raman analysis shows different peaks related to In2S3 phase. Optical analysis shows that these films are transparent in the visible and near IR with a transmittance higher than 85%. The optical gap energy is found to be direct and varies from 2.61eV to 2.76eV with the increase of Sn:In ratio from 0 to 4×10−3. The films are n type and Sn doping improves considerably their conductivity. The photoluminescence behavior of In2S3:Sn films was also studied.

Suggested Citation

  • N. Bouguila & M. Kraini & J. Koaib & I. Halidou & C. Vázquez-Vázquez & M. A. López-Quintela & S. Alaya, 2019. "PROPERTIES OF LOW-LEVEL Sn-DOPED In2S3 FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 26(01), pages 1-11, January.
    • Handle: RePEc:wsi:srlxxx:v:26:y:2019:i:01:n:s0218625x18501263
    DOI: 10.1142/S0218625X18501263
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