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A Scanning Tunneling Microscopy Study Of Monolayer And Bilayer Transition-Metal Dichalcogenides Grown By Molecular-Beam Epitaxy

Author

Listed:
  • MAOHAI XIE

    (Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong)

  • JINGLEI CHEN

    (Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong)

Abstract

This review presents an account of some recent scanning tunneling microscopy and spectroscopy (STM/S) studies of monolayer and bilayer transition-metal dichalcogenide (TMD) films grown by molecular-beam epitaxy (MBE). In addition to some intrinsic properties revealed by STM/S, defects such as inversion domain boundaries and point defects, their properties and induced effects, are presented. More specifically, the quantum confinement and moiré potential effects, charge state transition, quasi-particle interference and structural phase transition as revealed by STM/S are described.

Suggested Citation

  • Maohai Xie & Jinglei Chen, 2018. "A Scanning Tunneling Microscopy Study Of Monolayer And Bilayer Transition-Metal Dichalcogenides Grown By Molecular-Beam Epitaxy," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 25(Supp01), pages 1-14, December.
    • Handle: RePEc:wsi:srlxxx:v:25:y:2018:i:supp01:n:s0218625x18410020
    DOI: 10.1142/S0218625X18410020
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