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LOW-TEMPERATURE GROWTH AND ELECTRIC PROPERTIES OF K0.5Na0.5Nbo3 THIN FILMS BY MICROWAVE IRRADIATION

Author

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  • N. LI

    (School of Material Science and Engineering, Shenyang Aerospace University, Shenyang 110136, P. R. China)

Abstract

K0.5Na0.5Nbo3 wet films were spin-coated on Pt/Ti/SiO2/Si substrates by chemical solution deposition method. The microwave irradiation was introduced as the annealing method. The microstructure and electric properties of KNN thin films were tested and analyzed. It was found that the KNN thin film can be well crystallized by microwave irradiation at the temperature as low as 425∘C. The KNN thin film annealed at 425∘C gains the uniform microstructure, grain refinement, better electric properties and low leakage current density.

Suggested Citation

  • N. Li, 2018. "LOW-TEMPERATURE GROWTH AND ELECTRIC PROPERTIES OF K0.5Na0.5Nbo3 THIN FILMS BY MICROWAVE IRRADIATION," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 25(07), pages 1-6, October.
    • Handle: RePEc:wsi:srlxxx:v:25:y:2018:i:07:n:s0218625x19500148
    DOI: 10.1142/S0218625X19500148
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