IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v25y2018i06ns0218625x18501184.html
   My bibliography  Save this article

Amorphous Vanadium Dioxide: The Resist For Electron-Beam Lithography

Author

Listed:
  • GENRIKH STEFANOVICH

    (Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, Russia)

  • ANDREY VELICHKO

    (Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, Russia)

  • ALEXANDER PERGAMENT

    (Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, Russia)

  • PETER BORISKOV

    (Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, Russia)

Abstract

Amorphous vanadium dioxide, in combination with the resist properties, allowing one to create nanoscale structures, and with the effects of electrical switching and memory, should be in demand by the electronic industry. The opportunity to prepare highly sensitive to electron beam, optical and ion irradiation oxide films of vanadium by vacuum methods allows hope for simplified methods for coating and developing resists based on vanadium oxides. The scope of this review article is indicated by its title, namely, it encompasses the authors’ experimental results and model approximations on electron-beam modification of vanadium dioxide thin films and application of these films as inorganic nanolithography resists. These findings have been earlier published in a number of scattered original papers, and here we unite them all in one detailed review supplementing with new, previously unpublished data.

Suggested Citation

  • Genrikh Stefanovich & Andrey Velichko & Alexander Pergament & Peter Boriskov, 2018. "Amorphous Vanadium Dioxide: The Resist For Electron-Beam Lithography," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 25(06), pages 1-28, August.
    • Handle: RePEc:wsi:srlxxx:v:25:y:2018:i:06:n:s0218625x18501184
    DOI: 10.1142/S0218625X18501184
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X18501184
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X18501184?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:25:y:2018:i:06:n:s0218625x18501184. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.