Author
Listed:
- XIAOBO CHEN
(School of New Energy and Electronic Engineering, Yancheng Teachers University, Yancheng 224051, P. R. China)
- YU TANG
(School of Intelligent Manufacturing, Sichuan University of Arts and Science, Dazhou 635000, P. R. China)
- JIABO HAO
(School of Intelligent Manufacturing, Sichuan University of Arts and Science, Dazhou 635000, P. R. China)
Abstract
Sb-doped silicon nanocrystals (Si–NCs) films were fabricated by magnetron co-sputtering combined with rapid-thermal annealing. The effects of Sb content on the structural and electrical properties of the films were studied. The dot size increased with the increasing Sb content, and could be correlated to the effect of Sb-induced crystallization. The variation in the concentration of Sb shows a significant impact on the film properties, where as doped with 0.8at.% of Sb exhibited major property improvements when compared with other films. By employing Sb-doped Si–NCs films as emitter layers, Si–NCs/monocrystalline silicon heterojunction solar cells were fabricated and the effect of the Sb doping concentration on the photovoltaic properties was studied. It is found that the doping level in the Si–NCs layer is a key factor in determining the short-circuit current density and power conversion efficiency (PCE). With an optimized doping concentration of 0.8at.% of Sb, a maximal PCE of 7.10% was obtained. This study indicates that the Sb-doped Si–NCs can be good candidates for all-silicon tandem solar cells.
Suggested Citation
Xiaobo Chen & Yu Tang & Jiabo Hao, 2018.
"SPUTTER-GROWN Sb-DOPED SILICON NANOCRYSTALS EMBEDDED IN SILICON-RICH CARBIDE FOR Si HETEROJUNCTION SOLAR CELLS,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 25(03), pages 1-6, April.
Handle:
RePEc:wsi:srlxxx:v:25:y:2018:i:03:n:s0218625x18500683
DOI: 10.1142/S0218625X18500683
Download full text from publisher
As the access to this document is restricted, you may want to
for a different version of it.
Corrections
All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:25:y:2018:i:03:n:s0218625x18500683. See general information about how to correct material in RePEc.
If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.
We have no bibliographic references for this item. You can help adding them by using this form .
If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.
For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .
Please note that corrections may take a couple of weeks to filter through
the various RePEc services.