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THE INFLUENCE OF HIGH-ENERGY ELECTRONS IRRADIATION ON SURFACE OF n-GaP AND ON Au/n-GaP/Al SCHOTTKY BARRIER DIODE

Author

Listed:
  • K. ÇINAR DEMİR

    (Department of Mining Engineering, Oltu Faculty of Earth Sciences, Atatürk University, 25400 Erzurum, Turkey)

  • S. V. KURUDIREK

    (#x2020;Department of Physics, Faculty of Sciences, Atatürk University, 25240 Erzurum, Turkey)

  • S. OZ

    (#x2020;Department of Physics, Faculty of Sciences, Atatürk University, 25240 Erzurum, Turkey)

  • M. BIBER

    (#x2021;Department of Biotechnology, Science Faculty, Necmettin Erbakan University, Konya, Turkey)

  • Ş. AYDOĞAN

    (#x2020;Department of Physics, Faculty of Sciences, Atatürk University, 25240 Erzurum, Turkey§Department of Environmental Engineering, Faculty of Engineering, Ardahan University, Ardahan, Turkey)

  • Y. ŞAHIN

    (#x2020;Department of Physics, Faculty of Sciences, Atatürk University, 25240 Erzurum, Turkey)

  • C. COŞKUN

    (#xB6;Department of Physics, Faculty of Arts and Sciences, Giresun University, 28100 Giresun, Turkey)

Abstract

We fabricated 25 Au/n-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current–voltage (I–V) and capacitance–voltage (C–V) measurements. From the I–V characteristics, experimental ideality factor n and barrier height Φ values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential Vbi, barrier height Φ, Fermi level EF and donor concentration Nd values have been determined from the reverse bias C–V and C−2−V curves of Au/n-GaP/Al Schottky barrier diodes at 100kHz before and after 12MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/n-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.

Suggested Citation

  • K. Çinar Demi̇r & S. V. Kurudirek & S. Oz & M. Biber & Ş. Aydoğan & Y. Şahin & C. Coşkun, 2018. "THE INFLUENCE OF HIGH-ENERGY ELECTRONS IRRADIATION ON SURFACE OF n-GaP AND ON Au/n-GaP/Al SCHOTTKY BARRIER DIODE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 25(03), pages 1-12, April.
    • Handle: RePEc:wsi:srlxxx:v:25:y:2018:i:03:n:s0218625x18500646
    DOI: 10.1142/S0218625X18500646
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