Author
Listed:
- GENYUAN YU
(State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China)
- LISHA FENG
(State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China)
- LU MENG
(State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China)
- ZHIZHEN YE
(State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China)
- JIANGUO LU
(State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China)
Abstract
The CH3NH3PbI3 films were synthesized by a facile low-cost solution process and were used to fabricate photoconductive detectors. The perovskite photodetector is very sensitive to light, with a high responsivity of 5.51mA/W and a sensitivity of 50 at 5V under 350nm light illumination. The device exhibits the fast rise and decay processes with similar appearance, and the relaxation time constants are 270 and 300ms, respectively. The photo-current shows an evident saturation, without further increase for prolonging the illumination period. The perovskite photodetectors display high responsive performances to short-wavelength lights. This study is expected to provide a fundamental knowledge of perovskite photodetectors with high speed and repeatability for practical applications.
Suggested Citation
Genyuan Yu & Lisha Feng & Lu Meng & Zhizhen Ye & Jianguo Lu, 2018.
"BEHAVIORS OF PHOTOCONDUCTIVE DETECTORS BASED ON MAPbI3 PEROVSKITE FILMS,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 25(02), pages 1-5, February.
Handle:
RePEc:wsi:srlxxx:v:25:y:2018:i:02:n:s0218625x18500579
DOI: 10.1142/S0218625X18500579
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