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Study On Band Structure Of Nanoporous Silicon Thin Film

Author

Listed:
  • XUEKE WU

    (College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, P. R. China†School of Physics and Electronic Engineering, Kaili University, Kaili 556011, P. R. China)

  • YANLIN TANG

    (#x2021;School of Physics, Guizhou University, Guiyang 550025, P. R. China)

Abstract

We investigate the energy band structure of nanoporous silicon thin film using first principles calculation based on density functional theory (DFT) with the generalized gradient approximation (GGA). The calculation results show that the band gaps of nanoporous silicon increase with increasing porosity, increase with decreasing the thickness of matrix layer, and almost independent of the thickness of pore layer. Moreover, the band structure of nanoporous silicon can be transformed from indirect to direct gap on thin films of (111) and (110) faces. It will be the guidance and reference for the fabrication of porous silicon optoelectronic devices.

Suggested Citation

  • Xueke Wu & Yanlin Tang, 2018. "Study On Band Structure Of Nanoporous Silicon Thin Film," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 25(01), pages 1-5, January.
    • Handle: RePEc:wsi:srlxxx:v:25:y:2018:i:01:n:s0218625x18500452
    DOI: 10.1142/S0218625X18500452
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