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SYNTHESIS AND MAGNETIC PROPERTIES OF Ni-DOPED ZnO THIN FILMS: EXPERIMENTAL AND AB INITIO STUDY

Author

Listed:
  • M. ROUCHDI

    (Faculty of Sciences, Mohammed V University, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco)

  • E. SALMANI

    (#x2020;Faculty of Sciences, LMPHE, Mohammed V University, B.P. 1014 Rabat, Morocco)

  • A. EL HAT

    (Faculty of Sciences, Mohammed V University, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco)

  • N. HASSANAIN

    (Faculty of Sciences, Mohammed V University, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco)

  • A. MZERD

    (Faculty of Sciences, Mohammed V University, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco)

Abstract

Structural and magnetic properties of Zn1−xNixO thin films and diluted magnetic semiconductors have been investigated. This sample has been synthesized using a spray pyrolysis technique with a stoechiometric mixture of zinc acetate (C4H6O4Zn⋅2H2O) and Nickel acetate (C4H6O4Ni⋅ 2H2O) on a heated glass substrate at 450∘C. The films were characterized by X-ray diffraction (XRD), UV–Vis spectrophotometry and Hall Effect measurements. These films of ZnO crystallized in the hexagonal Wurtzite structure. The optical study showed that the band-gap energy was increased, from 3.3eV to 3.5eV, with increasing the Ni concentration. The film resistivity was affected by Ni-doping, and the best resistivity value 1.15×10−2 (Ω cm) was obtained for the film doped with 2 at.% Ni. The electronic structure and optical properties of the Wurtzite structure Zn1−xNixO were obtained by first-principles calculations using the Korringa–Kohn–Rostoker method combined with the coherent potential approximation (CPA), as well as CPA confirm our results.

Suggested Citation

  • M. Rouchdi & E. Salmani & A. El Hat & N. Hassanain & A. Mzerd, 2017. "SYNTHESIS AND MAGNETIC PROPERTIES OF Ni-DOPED ZnO THIN FILMS: EXPERIMENTAL AND AB INITIO STUDY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 24(06), pages 1-10, August.
    • Handle: RePEc:wsi:srlxxx:v:24:y:2017:i:06:n:s0218625x17500858
    DOI: 10.1142/S0218625X17500858
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