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The Influence Of The Surface Orientation On The Morphology During Homoepitaxial Growth Of Nickel By Molecular Dynamics Simulation

Author

Listed:
  • A. HASSANI

    (Laboratory of Radiation and Matter, Faculty of Science and Technology, University Hassan 1, 26000 Settat, Morocco‡Laboratoire des Sciences des Matériaux, des Milieux et de la Modélisation (LS3M), La Faculté Polydiscipminaire de Khouribga, University Hassan 1, 25000 Khouribga, Morocco)

  • A. MAKAN

    (#x2020;Laboratory of Water and Environment, Faculty of Science, University Chouaib Doukkali, 24000 El Jadida, Morocco)

  • K. SBIAAI

    (#x2021;Laboratoire des Sciences des Matériaux, des Milieux et de la Modélisation (LS3M), La Faculté Polydiscipminaire de Khouribga, University Hassan 1, 25000 Khouribga, Morocco)

  • A. TABYAOUI

    (Laboratory of Radiation and Matter, Faculty of Science and Technology, University Hassan 1, 26000 Settat, Morocco)

  • A. HASNAOUI

    (#x2021;Laboratoire des Sciences des Matériaux, des Milieux et de la Modélisation (LS3M), La Faculté Polydiscipminaire de Khouribga, University Hassan 1, 25000 Khouribga, Morocco)

Abstract

Homoepitaxial growth film for (001), (110) and (111) Ni substrates is investigated by means of molecular dynamics (MD) simulation. Embedded atom method (EAM) is considered to represent the interaction potential between nickel atoms. The simulation is performed at 300K using an incident energy of 0.06eV. In this study, the deposition process is performed periodically and the period, n, is relative to a perfect layer filling. The coverage rate of the actual expected level, L(n), can be considered a determinant for thin-film growth of nickel. The L(n) level is the most filled level during the deposition on (001) substrate, while it is the less filled one in the case of (111) substrate. Moreover, the upper level is the one which is responsible for the surface roughness and the appearance time of an upper layer may also be a factor influencing the surface roughness. The deposition on (111) substrate induces the most rigorous surface with a rapid appearance time of the upper layers. The L(n−1) layers are almost completely filled for all substrates. The L(n−2) and lower layers are completely filled for (001) and (110) substrates while for (111) substrate the completely filled layers are L(n−3) and lower ones.

Suggested Citation

  • A. Hassani & A. Makan & K. Sbiaai & A. Tabyaoui & A. Hasnaoui, 2017. "The Influence Of The Surface Orientation On The Morphology During Homoepitaxial Growth Of Nickel By Molecular Dynamics Simulation," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 24(02), pages 1-8, February.
    • Handle: RePEc:wsi:srlxxx:v:24:y:2017:i:02:n:s0218625x17500196
    DOI: 10.1142/S0218625X17500196
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