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GROWTH OF SPUTTERED-ALUMINUM OXIDE THIN FILMS ON Si (100) AND Si (111) SUBSTRATES WITH Al2O3 BUFFER LAYER

Author

Listed:
  • WEI QIANG LIM

    (Nano Optoelectronics and Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang, Malaysia)

  • SUBRAMANI SHANMUGAN

    (Nano Optoelectronics and Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang, Malaysia)

  • MUTHARASU DEVARAJAN

    (Nano Optoelectronics and Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang, Malaysia)

Abstract

Aluminum oxide (Al2O3) thin films with Al2O3 buffer layer were deposited on Si (100) and Si (111) substrates using RF magnetron sputtering of Al2O3 target in Ar atmosphere. The synthesized films were then annealed at the temperature of 400∘C, 600∘C and 800∘C in nitrogen (N2) environment for 6h. Structural properties and surface morphology are examined by using X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscope (AFM). XRD analysis indicated that different orientation of Al2O3 were formed with different intensities due to increase in the annealing temperature. From FESEM cross-section analysis results, it is observed that the thickness of films were increased as the annealing temperature increased. EDX analysis shows that the concentration of aluminum and oxygen on both the Si substrates increased with the increase in annealing temperature. The surface roughness of the films were found to be decreased first when the annealing temperature is increased to 400∘C, yet the roughness increased when the annealing temperature is further increased to 800∘C.

Suggested Citation

  • Wei Qiang Lim & Subramani Shanmugan & Mutharasu Devarajan, 2016. "GROWTH OF SPUTTERED-ALUMINUM OXIDE THIN FILMS ON Si (100) AND Si (111) SUBSTRATES WITH Al2O3 BUFFER LAYER," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 23(03), pages 1-11, June.
    • Handle: RePEc:wsi:srlxxx:v:23:y:2016:i:03:n:s0218625x16500165
    DOI: 10.1142/S0218625X16500165
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