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FERROMAGNETISM IN SEMICONDUCTOR C–Ni FILMS AT DIFFERENT ANNEALING TEMPERATURE

Author

Listed:
  • VALI DALOUJI

    (Department of Physics, Malayer University, Malayer, Iran)

  • SMOHAMMAD ELAHI

    (#x2020;Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran)

Abstract

In this work, the microstructure and magnetic properties of carbon–nickel (C–Ni) composite films annealed at different temperatures (300–1000∘C) were investigated. The films were grown by radio frequency magnetron sputtering on quartz substrates at room temperature. The nickel concentration in the films are affected by changing of the value of evaporation nickel atoms and measured by Rutherford backscattering spectroscopy (RBS). Values of coercive field were measured under both increasing and decreasing applied magnetic field. It is shown that the coercive field of films strongly dependent on the annealing temperature and at 500∘C films has maximum value of 93.67Oe. The difference in the coercive fields increased for films annealed from 300 to 500∘C and then decreased from 500 to 1000∘C. The ID/IG ratio of Raman spectra would indicate the presence of higher sp2 bonded carbon in the films annealed at 800∘C.

Suggested Citation

  • Vali Dalouji & Smohammad Elahi, 2016. "FERROMAGNETISM IN SEMICONDUCTOR C–Ni FILMS AT DIFFERENT ANNEALING TEMPERATURE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 23(03), pages 1-8, June.
    • Handle: RePEc:wsi:srlxxx:v:23:y:2016:i:03:n:s0218625x16500025
    DOI: 10.1142/S0218625X16500025
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