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Effect Of Deposition Temperature On The Properties Of Tio2 Thin Films Deposited By Mocvd

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  • ZAKI S. KHALIFA

    (Department of Physics, Beni-Suef University, Beni-Suef 62111, Egypt)

Abstract

Crystal structure, microstructure, and optical properties of TiO2 thin films deposited on quartz substrates by metal-organic chemical vapor deposition (MOCVD) in the temperature range from 250∘C to 450∘C have been studied. The crystal structure, thickness, microstructure, and optical properties have been carried out using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), and UV-visible transmittance spectroscopy, respectively. XRD patterns show that the obtained films are pure anatase. Simultaneously, the crystal size calculated using XRD peaks, and the grain size measured by AFM decrease with the increase in deposition temperature. Moreover, the texture of the films change and roughness decrease with the increase in deposition temperature. The spectrophotometric transmittance spectra have been used to calculate the refractive index, extinction coefficient, dielectric constant, optical energy gap, and porosity of the deposited films. While the refractive index and dielectric constant decrease with the increase of deposition temperature, the porosity shows the opposite.

Suggested Citation

  • Zaki S. Khalifa, 2016. "Effect Of Deposition Temperature On The Properties Of Tio2 Thin Films Deposited By Mocvd," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 23(02), pages 1-9, April.
    • Handle: RePEc:wsi:srlxxx:v:23:y:2016:i:02:n:s0218625x16500013
    DOI: 10.1142/S0218625X16500013
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