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INVESTIGATION OF NEAR-SURFACE DEFECTS INDUCED BY SPIKE RAPID THERMAL ANNEALING IN c-SILICON SOLAR CELLS

Author

Listed:
  • GUODONG LIU

    (Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China†Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, P. R. China)

  • PAN REN

    (Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China†Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, P. R. China)

  • DAYONG ZHANG

    (Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China†Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, P. R. China)

  • WEIPING WANG

    (Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China†Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, P. R. China)

  • JIANFENG LI

    (Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China)

Abstract

The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100∘C. Photo J–V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above 1×1013cm−3.

Suggested Citation

  • Guodong Liu & Pan Ren & Dayong Zhang & Weiping Wang & Jianfeng Li, 2016. "INVESTIGATION OF NEAR-SURFACE DEFECTS INDUCED BY SPIKE RAPID THERMAL ANNEALING IN c-SILICON SOLAR CELLS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 23(02), pages 1-7, April.
    • Handle: RePEc:wsi:srlxxx:v:23:y:2016:i:02:n:s0218625x15501073
    DOI: 10.1142/S0218625X15501073
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