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Bismuth Oxide Thin Films Deposited On Silicon Through Pulsed Laser Ablation, For Infrared Detectors

Author

Listed:
  • SIMONA CONDURACHE-BOTA

    (Chemistry, Physics and Environment Department, Dunarea de Jos University of Galati, 111 Domneasca Street, Galati 800201, Romania)

  • CATALIN CONSTANTINESCU

    (National Institute for Laser, Plasma and Radiation Physics, INFLPR, Lasers Department, PPAM, 409 Atomistilor Blvd., 077125 Magurele, Bucharest, Romania)

  • NICOLAE TIGAU

    (Chemistry, Physics and Environment Department, Dunarea de Jos University of Galati, 111 Domneasca Street, Galati 800201, Romania)

  • MIRELA PRAISLER

    (Chemistry, Physics and Environment Department, Dunarea de Jos University of Galati, 111 Domneasca Street, Galati 800201, Romania)

Abstract

Infrared detectors are used in many human activities, from industry to military, telecommunications, environmental studies and even medicine. Bismuth oxide thin films have proved their potential for optoelectronic applications, but their uses as infrared sensors have not been thoroughly studied so far. In this paper, pulsed laser ablation of pure bismuth targets within a controlled oxygen atmosphere is proposed for the deposition of bismuth oxide films on Si (100) substrates. Crystalline films were obtained, whose uniformity depends on the deposition conditions (number of laser pulses and the use of a radio-frequency (RF) discharge of the oxygen inside the deposition chamber). The optical analysis proved that the refractive index of the films is higher than 3 and that their optical bandgap is around 1eV, recommending them for infrared applications.

Suggested Citation

  • Simona Condurache-Bota & Catalin Constantinescu & Nicolae Tigau & Mirela Praisler, 2016. "Bismuth Oxide Thin Films Deposited On Silicon Through Pulsed Laser Ablation, For Infrared Detectors," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 23(02), pages 1-9, April.
    • Handle: RePEc:wsi:srlxxx:v:23:y:2016:i:02:n:s0218625x15501048
    DOI: 10.1142/S0218625X15501048
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